FMC specializes in memory that uses ferroelectric hafnium oxide (HfO₂) to create DRAM+ that retains data without power. The technology replaces the typical capacitor in DRAM wit ...

OKI Circuit Technology (“OTC”; President: Masaya Suzuki; Head office: Tsuruoka City, Yamagata), the OKI Group printed circuit ...

The additions include Huawei and HiSilicon. imec researchers proposed a new DRAM bit cell without a capacitor that uses two thin-film indium-gallium-zinc-oxide (IGZO) transistors for high-density 3D ...

The rapid growth of mobile computing, AI, and Automotive technologies is driving demand for faster, more efficient, and ...

Abstract: One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C ... we ...

Cell size is 0.06 square micron meters ... nickel-silicide gate electrodes, and zirconium-oxide DRAM capacitors—that have been proven in NEC Electronics’ 55 nm UX7LSeD technology. These innovations ...

Samsung Electronics is encountering delays in the development of its next-generation 1c DRAM chips, according to sources ...

SK Hynix, a direct rival of Samsung, has dethroned it in the DRAM market after 33 consecutive years of dominance.

Applied to a DRAM, it turns the DRAM capacitor into a low power, nonvolatile storage device while maintaining the high DRAM performance to produce a disruptive nonvolatile DRAM memory ideal for AI ...