OKI Circuit Technology ("OTC"; President: Masaya Suzuki; Head office: Tsuruoka City, Yamagata), the OKI Group printed circuit board (PCB) company, has successfully developed 124-layer PCB technology ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

D ferroelectric memory stores data with zero power. Discover how this breakthrough tech could revolutionize AI, edge devices, and low-power storage solutions.

FMC specializes in memory that uses ferroelectric hafnium oxide (HfO₂) to create DRAM+ that retains data without power. The technology replaces the typical capacitor in DRAM wit ...

Abstract: One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C ... we ...

Applied to a DRAM, it turns the DRAM capacitor into a low power, nonvolatile storage device while maintaining the high DRAM performance to produce a disruptive nonvolatile DRAM memory ideal for AI ...

The additions include Huawei and HiSilicon. imec researchers proposed a new DRAM bit cell without a capacitor that uses two thin-film indium-gallium-zinc-oxide (IGZO) transistors for high-density 3D ...

Nanoscale devices are devices that are one hundred to ten thousand times smaller than human cells and that can manipulate matter on atomic or molecular scales. Examples of nanoscale devices are ...

Magnetoresistive random-access memory, or MRAM, promises to make computers more efficient and powerful, but a few hurdles ...

“This paper presents a power management unit (PMU) architecture designed for energy-harvesting IoT devices, integrating a dual-capacitor system, an ultra-low-leakage balloon-based microcontroller (MCU ...